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| PD - 93999 IRF5852 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS 20 V RDS(on) max () ) 0.090@VGS = 4.5V 0.120@VGS = 2.5V ID 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. TSOP-6 G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 Top View Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 2.7 2.2 11 0.96 0.62 7.7 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 130 Units C/W www.irf.com 1 3/1/01 IRF5852 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 --- --- --- 0.60 5.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.016 --- --- --- --- --- --- --- --- 4.0 0.95 0.88 6.6 1.2 15 2.4 400 48 32 Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.090 VGS = 4.5V, ID = 2.7A 0.120 VGS = 2.5V, ID = 2.2A 1.25 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 2.7A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C 100 VGS = 12V nA -100 V GS = -12V 6.0 ID = 2.7A --- nC VDS = 16V --- VGS = 4.5V --- VDD = 10V --- ID = 1.0A ns --- RG = 6.2 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 25 6.5 0.96 A 11 1.2 38 9.8 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 0.96A, VGS = 0V TJ = 25C, I F = 0.96A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 5sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF5852 100 VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V TOP 10 10 1 1 1.50V 1.50V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 2.7A I D , Drain-to-Source Current (A) 10 TJ = 25 C TJ = 150 C 1.5 1.0 1 0.5 0.1 1.5 V DS = 15V 20s PULSE WIDTH 2.0 2.5 3.0 VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5852 600 500 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10 ID = 2.7A V DS = 16V V DS = 10V 8 C, Capacitance (pF) 400 Ciss 6 300 4 200 100 2 0 1 Coss Crss 10 100 0 0 2 4 6 8 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) I D , Drain Current (A) 10 10 100us TJ = 150 C 1 1 1ms TJ = 25 C V GS = 0 V 0.6 0.8 1.0 1.2 1.4 10ms 0.1 0.4 0.1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5852 3.0 VDS 2.5 RD VGS RG I D , Drain Current (A) D.U.T. + 2.0 - VDD 1.5 4.5V Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit 0.5 VDS 0.0 25 50 75 100 125 150 90% TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t2 1 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF5852 R DS(on) , Drain-to -Source On Resistance ( ) R DS (on) , Drain-to-Source On Resistance ( ) 0.14 0.30 0.12 0.20 0.10 VGS = 2.5V 0.10 0.08 ID = 2.7A VGS = 4.5V 0.00 0 2 4 6 8 10 12 ID , Drain Current (A) 0.06 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F 4.5 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF5852 1.2 24 20 VGS(th) , Variace ( V ) 1.0 ID = 250A 16 0.8 Power (W) 12 8 0.6 4 0.4 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000 T J , Temperature ( C ) Time (sec) Fig 14. Threshold Voltage Vs. Temperature Fig 15. Typical Power Vs. Time www.irf.com 7 IRF5852 TSOP-6 Package Outline TSOP-6 Part Marking Information EXAMPLE: T HIS IS AN SI3443DV WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D DATE CODE 3A YW T OP WAFER LOT NUMBER CODE XXXX BOTT OM 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 24 25 26 X Y Z PART NUMBER CODE REFERENCE: 3A = SI3443DV 3B = IRF5800 3C = IRF5850 3D = IRF5851 3E = IRF5852 3I = IRF5805 3J = IRF5806 DATE CODE EXAMPLES: YWW = 9603 = 6C YWW = 9632 = FF WW = (27-52) IF PRECEDED BY A LET TER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 X Y 8 www.irf.com IRF5852 TSOP-6 Tape & Reel Information Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 www.irf.com 9 |
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